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    <identifier identifierType="DOI">10.26165/JUELICH-DATA/1HWSUA</identifier>
    <creators><creator><creatorName>Menzel, Stephan</creatorName><affiliation>(Peter Grünberg Institut (PGI-7))</affiliation></creator><creator><creatorName>Son, Seokki</creatorName><affiliation>(Peter Grünberg Institut (PGI-7))</affiliation></creator><creator><creatorName>Schön, Daniel</creatorName><affiliation>(Peter Grünberg Institut (PGI-7))</affiliation></creator></creators>
    <titles>
        <title>JART VCM Rth</title>
    </titles>
    <publisher>Jülich DATA</publisher>
    <publicationYear>2025</publicationYear>
    <resourceType resourceTypeGeneral="Dataset"/>
    
    <descriptions>
        <description descriptionType="Abstract">This model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance (Rth,eff) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and includes the variability in switching cycles to reflect experimental conditions. Figure 1(JART_VCM_Rth_Fig1.jpg) shows that the validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively. The Verilog-A code of this model and user guide can be downloaded.</description>
    </descriptions>
    <contributors><contributor contributorType="ContactPerson"><contributorName>Menzel, Stephan</contributorName><affiliation>(Peter Grünberg Institut (PGI-7))</affiliation></contributor></contributors>
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