{"id":31869,"identifier":"JUELICH-DATA/1HWSUA","persistentUrl":"https://doi.org/10.26165/JUELICH-DATA/1HWSUA","protocol":"doi","authority":"10.26165","publisher":"Jülich DATA","publicationDate":"2025-07-15","storageIdentifier":"s3://10.26165/JUELICH-DATA/1HWSUA","datasetVersion":{"id":871,"datasetId":31869,"datasetPersistentId":"doi:10.26165/JUELICH-DATA/1HWSUA","storageIdentifier":"s3://10.26165/JUELICH-DATA/1HWSUA","versionNumber":1,"versionMinorNumber":0,"versionState":"RELEASED","lastUpdateTime":"2025-07-15T08:04:50Z","releaseTime":"2025-07-15T08:04:50Z","createTime":"2025-07-15T06:41:09Z","license":"CC0","termsOfUse":"CC0 Waiver","fileAccessRequest":false,"metadataBlocks":{"citation":{"displayName":"Citation Metadata","fields":[{"typeName":"title","multiple":false,"typeClass":"primitive","value":"JART VCM Rth"},{"typeName":"author","multiple":true,"typeClass":"compound","value":[{"authorName":{"typeName":"authorName","multiple":false,"typeClass":"primitive","value":"Menzel, Stephan"},"authorAffiliation":{"typeName":"authorAffiliation","multiple":false,"typeClass":"primitive","value":"Peter Grünberg Institut (PGI-7)"}},{"authorName":{"typeName":"authorName","multiple":false,"typeClass":"primitive","value":"Son, Seokki"},"authorAffiliation":{"typeName":"authorAffiliation","multiple":false,"typeClass":"primitive","value":"Peter Grünberg Institut (PGI-7)"}},{"authorName":{"typeName":"authorName","multiple":false,"typeClass":"primitive","value":"Schön, Daniel"},"authorAffiliation":{"typeName":"authorAffiliation","multiple":false,"typeClass":"primitive","value":"Peter Grünberg Institut (PGI-7)"}}]},{"typeName":"datasetContact","multiple":true,"typeClass":"compound","value":[{"datasetContactName":{"typeName":"datasetContactName","multiple":false,"typeClass":"primitive","value":"Menzel, Stephan"},"datasetContactAffiliation":{"typeName":"datasetContactAffiliation","multiple":false,"typeClass":"primitive","value":"Peter Grünberg Institut (PGI-7)"},"datasetContactEmail":{"typeName":"datasetContactEmail","multiple":false,"typeClass":"primitive","value":"st.menzel@fz-juelich.de"}}]},{"typeName":"dsDescription","multiple":true,"typeClass":"compound","value":[{"dsDescriptionValue":{"typeName":"dsDescriptionValue","multiple":false,"typeClass":"primitive","value":"This model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance (Rth,eff) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and includes the variability in switching cycles to reflect experimental conditions. Figure 1(JART_VCM_Rth_Fig1.jpg) shows that the validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively. The Verilog-A code of this model and user guide can be downloaded."}}]},{"typeName":"subject","multiple":true,"typeClass":"controlledVocabulary","value":["Computer and Information Science","Engineering","Physics"]},{"typeName":"depositor","multiple":false,"typeClass":"primitive","value":"Schön, Daniel"},{"typeName":"dateOfDeposit","multiple":false,"typeClass":"primitive","value":"2025-07-15"}]},"fzj":{"displayName":"FZJ Metadata","fields":[{"typeName":"institute","multiple":true,"typeClass":"controlledVocabulary","value":["PGI-7"]},{"typeName":"pof4","multiple":true,"typeClass":"controlledVocabulary","value":["Memristive Materials and Devices (POF4-5233)"]}]}},"files":[{"description":"This figure shows that the validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively.","label":"JART_VCM_Rth_Fig1.jpg","restricted":false,"version":1,"datasetVersionId":871,"dataFile":{"id":31870,"persistentId":"","pidURL":"","filename":"JART_VCM_Rth_Fig1.jpg","contentType":"image/jpeg","filesize":69745,"description":"This figure shows that the validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively.","storageIdentifier":"s3://juelich_data:1980ccf9e64-7a162b690145","rootDataFileId":-1,"checksum":{"type":"SHA-256","value":"65cd826d38a25a0df684249a7e317762e001d3bfebaf625f930a0ea96ce53d14"},"creationDate":"2025-07-15"}},{"description":"The Verilog-A code of this model","label":"JART VCM Rth veriloga.va","restricted":false,"version":1,"datasetVersionId":871,"dataFile":{"id":31871,"persistentId":"","pidURL":"","filename":"JART VCM Rth veriloga.va","contentType":"application/octet-stream","filesize":9594,"description":"The Verilog-A code of this model","storageIdentifier":"s3://juelich_data:1980ccf9ca2-f2a787ab0c43","rootDataFileId":-1,"checksum":{"type":"SHA-256","value":"52fced1bc167aa19129a3087e140814324a44a14753bd691a5645cc3bea5b98a"},"creationDate":"2025-07-15"}}],"citation":"Menzel, Stephan; Son, Seokki; Schön, Daniel, 2025, \"JART VCM Rth\", https://doi.org/10.26165/JUELICH-DATA/1HWSUA, Jülich DATA, V1"}}