{"id":28452,"identifier":"JUELICH-DATA/LUA8QY","persistentUrl":"https://doi.org/10.26165/JUELICH-DATA/LUA8QY","protocol":"doi","authority":"10.26165","publisher":"Jülich DATA","publicationDate":"2025-03-25","storageIdentifier":"s3://10.26165/JUELICH-DATA/LUA8QY","datasetVersion":{"id":809,"datasetId":28452,"datasetPersistentId":"doi:10.26165/JUELICH-DATA/LUA8QY","storageIdentifier":"s3://10.26165/JUELICH-DATA/LUA8QY","versionNumber":1,"versionMinorNumber":0,"versionState":"RELEASED","lastUpdateTime":"2025-03-25T09:37:55Z","releaseTime":"2025-03-25T09:37:55Z","createTime":"2025-03-25T09:33:35Z","license":"CC0","termsOfUse":"CC0 Waiver","fileAccessRequest":false,"metadataBlocks":{"citation":{"displayName":"Citation Metadata","fields":[{"typeName":"title","multiple":false,"typeClass":"primitive","value":"JART VCM v1b"},{"typeName":"author","multiple":true,"typeClass":"compound","value":[{"authorName":{"typeName":"authorName","multiple":false,"typeClass":"primitive","value":"Menzel, Stephan"},"authorAffiliation":{"typeName":"authorAffiliation","multiple":false,"typeClass":"primitive","value":"Peter Grünberg Institut (PGI-7)"}},{"authorName":{"typeName":"authorName","multiple":false,"typeClass":"primitive","value":"Bengel, Christopher"},"authorAffiliation":{"typeName":"authorAffiliation","multiple":false,"typeClass":"primitive","value":"RWTH Aachen University"}}]},{"typeName":"datasetContact","multiple":true,"typeClass":"compound","value":[{"datasetContactName":{"typeName":"datasetContactName","multiple":false,"typeClass":"primitive","value":"Menzel, Stephan"},"datasetContactAffiliation":{"typeName":"datasetContactAffiliation","multiple":false,"typeClass":"primitive","value":"Peter Grünberg Institut (PGI-7)"},"datasetContactEmail":{"typeName":"datasetContactEmail","multiple":false,"typeClass":"primitive","value":"st.menzel@fz-juelich.de"}}]},{"typeName":"dsDescription","multiple":true,"typeClass":"compound","value":[{"dsDescriptionValue":{"typeName":"dsDescriptionValue","multiple":false,"typeClass":"primitive","value":"The JART VCM v1b var model represents an extension of the JART VCM v1b model which additionally considers device-to-device and cycle-to-cycle variability. The ECD can be seen in Fig. 1. The physical equations are the same as in the v1b model. Device-to-device variability is achieved through parameter variation of specific parameters during initialization of the devices and cycle-to-cycle variability is achieved through modification of the same parameters during the simulation run [1].\r\n<br><br>\r\nCharacteristic figures used to describe VCM cells include the I-V characteristic, which can be used to determine the range for LRS and HRS as well as the ranges of SET and RESET voltages. Experimental I-V sweeps for a current compliance of 100 μA are shown in Fig. 2 (a) whereas Fig. 2 (b) shows the simulation result. Both sweeps were performed using the same sweep rate (1 V/s) and the same stop voltages for SET and RESET of ±1.3 V. The SET voltages are between −0.45 V and −0.75 V, while the RESET voltages are between 0.45 V and 0.65 V. Fig. 2 (c) shows the measured SET delays, i.e. the time required to switch the cell into the LRS for a voltage pulse of a specific height between −0.6 V and −1.1 V. Fig. 2 (d) shows the simulated SET kinetics. The variability model reproduces the non-linearity as well as the multiple orders of magnitude variation in the SET time. Fig. 2 (e) shows a more complex experiment, which could be reproduced using the proposed model, namely the RESET kinetics for different initial LRS. For this experiment, the devices were first SET using different SET voltages which resulted in different LRS states. Afterward, a RESET kinetic was measured from those different LRS. Fig. 2 (g) shows the measured endurance characteristic over 1000 SET-RESET cycles. The LRS turns out to be very stable at around 3 kΩ, while the HRS varies between 30 kΩ and 100 kΩ with only a few outliers above 100 kΩ. Fig. 4 (h) shows the simulated endurance behavior over 1000 cycles. The LRS again is rather stable with a slightly larger variability than the experiment around 3 kΩ, while the HRS varies between 20 kΩ and 100 kΩ."}}]},{"typeName":"subject","multiple":true,"typeClass":"controlledVocabulary","value":["Chemistry","Computer and Information Science","Engineering","Physics"]},{"typeName":"publication","multiple":true,"typeClass":"compound","value":[{"publicationCitation":{"typeName":"publicationCitation","multiple":false,"typeClass":"primitive","value":"[1] C. Bengel, A. Siemon, F. Cüppers, S. Hoffmann-Eifert, A. Hardtdegen, M. von Witzleben, L. Hellmich, R. Waser and S. Menzel, Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models, IEEE Trancsactions on Circuits and Systems-I, VOL. 67, NO. 12, 2020."},"publicationIDType":{"typeName":"publicationIDType","multiple":false,"typeClass":"controlledVocabulary","value":"doi"},"publicationIDNumber":{"typeName":"publicationIDNumber","multiple":false,"typeClass":"primitive","value":"https://doi.org/10.1109/TCSI.2020.3018502"},"publicationURL":{"typeName":"publicationURL","multiple":false,"typeClass":"primitive","value":"https://doi.org/10.1109/TCSI.2020.3018502"}}]},{"typeName":"depositor","multiple":false,"typeClass":"primitive","value":"Schön, Daniel"},{"typeName":"dateOfDeposit","multiple":false,"typeClass":"primitive","value":"2025-03-25"}]},"fzj":{"displayName":"FZJ Metadata","fields":[{"typeName":"institute","multiple":true,"typeClass":"controlledVocabulary","value":["PGI-7"]},{"typeName":"pof4","multiple":true,"typeClass":"controlledVocabulary","value":["Memristive Materials and Devices (POF4-5233)"]}]}},"files":[{"description":"Equivalent Circuit diagram of the JART VCM v1b var model","label":"Figure1.jpg","restricted":false,"version":1,"datasetVersionId":809,"dataFile":{"id":28456,"persistentId":"","pidURL":"","filename":"Figure1.jpg","contentType":"image/jpeg","filesize":63067,"description":"Equivalent Circuit diagram of the JART VCM v1b var model","storageIdentifier":"s3://juelich_data:195cca5c3e6-c57d153ec352","rootDataFileId":-1,"checksum":{"type":"SHA-256","value":"0445d089fddea7ca09cb48409f828eddeaf3b8105ce3632cd0f8f7d44c92b737"},"creationDate":"2025-03-25"}},{"description":"Measured device characteristics alongside results obtained using the extended compact model. The first row shows measured (a) and simulated (b) voltage sourced I-V sweeps. The second row shows the measured (c) and simulated (d) SET kinetics and the third row shows the measured (e) and simulated (f) RESET kinetics. The blue circles represent the experimental RESET kinetics starting from LRS between 1.85 kΩ and 2.22 kΩ (LRS range I (experimental)) while the green points represent the RESET kinetics starting from LRS between 1.52 kΩ and 1.67 kΩ (LRS range II (exp.)). The solid lines represent the RESET kinetics of the deterministic model using the parameters from Table I and the initial LRS as detailed in [1]. The blue box plots show the RESET kinetics for the variability model for an LRS range between 1.92 kΩ and 2.04 kΩ (LRS range I (simulated)) while the green box plots show the RESET kinetics of the variability model for an LRS range between 1.58 kΩ and 1.67 kΩ (LRS range II (sim.)). The fourth row ((g) and (h)) shows the measured and simulated endurance behavior over 1000 cycles. Generally, a good qualitative agreement between measurement and simulation is observed not only for device properties like LRS, HRS, SET and RESET voltages and switching kinetics but also for the statistical behavior of these properties.","label":"Figure2.jpg","restricted":false,"version":1,"datasetVersionId":809,"dataFile":{"id":28455,"persistentId":"","pidURL":"","filename":"Figure2.jpg","contentType":"image/jpeg","filesize":304685,"description":"Measured device characteristics alongside results obtained using the extended compact model. The first row shows measured (a) and simulated (b) voltage sourced I-V sweeps. The second row shows the measured (c) and simulated (d) SET kinetics and the third row shows the measured (e) and simulated (f) RESET kinetics. The blue circles represent the experimental RESET kinetics starting from LRS between 1.85 kΩ and 2.22 kΩ (LRS range I (experimental)) while the green points represent the RESET kinetics starting from LRS between 1.52 kΩ and 1.67 kΩ (LRS range II (exp.)). The solid lines represent the RESET kinetics of the deterministic model using the parameters from Table I and the initial LRS as detailed in [1]. The blue box plots show the RESET kinetics for the variability model for an LRS range between 1.92 kΩ and 2.04 kΩ (LRS range I (simulated)) while the green box plots show the RESET kinetics of the variability model for an LRS range between 1.58 kΩ and 1.67 kΩ (LRS range II (sim.)). The fourth row ((g) and (h)) shows the measured and simulated endurance behavior over 1000 cycles. Generally, a good qualitative agreement between measurement and simulation is observed not only for device properties like LRS, HRS, SET and RESET voltages and switching kinetics but also for the statistical behavior of these properties.","storageIdentifier":"s3://juelich_data:195cca5c724-a6519023485b","rootDataFileId":-1,"checksum":{"type":"SHA-256","value":"f6e96dd7d19089f5e856d3854ab3ee6266f1de1a3c9fc26999a844cf41baa086"},"creationDate":"2025-03-25"}},{"description":"The Verilog-A code of this model","label":"JART VCM 1b veriloga-var.va","restricted":false,"version":1,"datasetVersionId":809,"dataFile":{"id":28454,"persistentId":"","pidURL":"","filename":"JART VCM 1b veriloga-var.va","contentType":"application/octet-stream","filesize":9155,"description":"The Verilog-A code of this model","storageIdentifier":"s3://juelich_data:195cca5d8b6-e085e60cc229","rootDataFileId":-1,"checksum":{"type":"SHA-256","value":"e52df7fb45cca64a9da925337e280234d380967e01bf6a5b77443799603eee95"},"creationDate":"2025-03-25"}},{"description":"The User Guide of the model","label":"User_Guide_for_the_JART_VCM_v1_Compact_Model.pdf","restricted":false,"version":1,"datasetVersionId":809,"dataFile":{"id":28453,"persistentId":"","pidURL":"","filename":"User_Guide_for_the_JART_VCM_v1_Compact_Model.pdf","contentType":"application/pdf","filesize":8146512,"description":"The User Guide of the model","storageIdentifier":"s3://juelich_data:195cca5ce16-fbf7f7f2bee4","rootDataFileId":-1,"checksum":{"type":"SHA-256","value":"18d83a6ca29a1bac36f5df30537cbb9dcd347df93236c220aa62bd3833fe695a"},"creationDate":"2025-03-25"}}],"citation":"Menzel, Stephan; Bengel, Christopher, 2025, \"JART VCM v1b\", https://doi.org/10.26165/JUELICH-DATA/LUA8QY, Jülich DATA, V1"}}