{"id":22181,"identifier":"JUELICH-DATA/NFHTAR","persistentUrl":"https://doi.org/10.26165/JUELICH-DATA/NFHTAR","protocol":"doi","authority":"10.26165","publisher":"Jülich DATA","publicationDate":"2025-03-25","storageIdentifier":"s3://10.26165/JUELICH-DATA/NFHTAR","datasetVersion":{"id":755,"datasetId":22181,"datasetPersistentId":"doi:10.26165/JUELICH-DATA/NFHTAR","storageIdentifier":"s3://10.26165/JUELICH-DATA/NFHTAR","versionNumber":1,"versionMinorNumber":0,"versionState":"RELEASED","lastUpdateTime":"2025-03-25T09:37:14Z","releaseTime":"2025-03-25T09:37:14Z","createTime":"2025-01-30T11:31:30Z","license":"CC0","termsOfUse":"CC0 Waiver","fileAccessRequest":false,"metadataBlocks":{"citation":{"displayName":"Citation Metadata","fields":[{"typeName":"title","multiple":false,"typeClass":"primitive","value":"JART VCM v2"},{"typeName":"author","multiple":true,"typeClass":"compound","value":[{"authorName":{"typeName":"authorName","multiple":false,"typeClass":"primitive","value":"Menzel, Stephan"},"authorAffiliation":{"typeName":"authorAffiliation","multiple":false,"typeClass":"primitive","value":"Peter Grünberg Institut (PGI-7)"}},{"authorName":{"typeName":"authorName","multiple":false,"typeClass":"primitive","value":"Bengel, Christopher"},"authorAffiliation":{"typeName":"authorAffiliation","multiple":false,"typeClass":"primitive","value":"RWTH Aachen University"}}]},{"typeName":"datasetContact","multiple":true,"typeClass":"compound","value":[{"datasetContactName":{"typeName":"datasetContactName","multiple":false,"typeClass":"primitive","value":"Menzel, Stephan"},"datasetContactEmail":{"typeName":"datasetContactEmail","multiple":false,"typeClass":"primitive","value":"st.menzel@fz-juelich.de"}}]},{"typeName":"dsDescription","multiple":true,"typeClass":"compound","value":[{"dsDescriptionValue":{"typeName":"dsDescriptionValue","multiple":false,"typeClass":"primitive","value":"The JARV VCM v2 model is an extension of the JART VCM v1 model. It includes two different switching locations I and II (see JART VCM v2.jpg). Thus, the model uses two state variables. In addition, diffusion between region I and II is included in this model, enabling the simulation of retention. The model was developed to simulate complementary switching and bipolar switching in a single device [1]."}}]},{"typeName":"subject","multiple":true,"typeClass":"controlledVocabulary","value":["Computer and Information Science","Engineering"]},{"typeName":"publication","multiple":true,"typeClass":"compound","value":[{"publicationCitation":{"typeName":"publicationCitation","multiple":false,"typeClass":"primitive","value":"[1] C. La Torre, A. F. Zurhelle, T. Breuer, R. Waser and S. Menzel, Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices, IEEE Trans. Electron Devices 66, 1268-1275 (2019)."},"publicationIDType":{"typeName":"publicationIDType","multiple":false,"typeClass":"controlledVocabulary","value":"doi"},"publicationIDNumber":{"typeName":"publicationIDNumber","multiple":false,"typeClass":"primitive","value":"https://doi.org/10.1109/TED.2019.2892997"},"publicationURL":{"typeName":"publicationURL","multiple":false,"typeClass":"primitive","value":"https://doi.org/10.1109/TED.2019.2892997"}}]},{"typeName":"depositor","multiple":false,"typeClass":"primitive","value":"Zhao, Xinyi"},{"typeName":"dateOfDeposit","multiple":false,"typeClass":"primitive","value":"2025-01-30"}]},"fzj":{"displayName":"FZJ Metadata","fields":[{"typeName":"institute","multiple":true,"typeClass":"controlledVocabulary","value":["PGI-7"]},{"typeName":"pof4","multiple":true,"typeClass":"controlledVocabulary","value":["Memristive Materials and Devices (POF4-5233)"]}]}},"files":[{"description":"To use the MATLAB app the downloaded file needs to be executed. 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