Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gateshttps://doi.org/10.26165/JUELICH-DATA/0X7H3SSchäpers, ThomasJülich DATA2025-02-072025-02-07T12:26:22ZSemiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 nm. The gate fingers have low gate leakage. As a proof of principle, we fabricated quantum dot devices using InAs nanowires placed on the gate fingers. These devices exhibit single electron tunneling and Coulomb blockade.Physicsburied gatessemiconductor nanowirequantum dotarXiv, 2411.19575, https://doi.org/10.48550/arXiv.2411.19575Schäpers, Thomas2025-02-07CC0CC0 Waiver