<?xml version='1.0' encoding='UTF-8'?><metadata xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns="http://dublincore.org/documents/dcmi-terms/"><dcterms:title>Code repository for band alignment calculations</dcterms:title><dcterms:identifier>https://doi.org/10.26165/JUELICH-DATA/8WA9I7</dcterms:identifier><dcterms:creator>Wittberg, Clemens</dcterms:creator><dcterms:publisher>Jülich DATA</dcterms:publisher><dcterms:issued>2026-07-30</dcterms:issued><dcterms:modified>2026-07-30T13:56:15Z</dcterms:modified><dcterms:description>The corresponding git repository can be found at: https://iffgit.fz-juelich.de/pgi-7/band-alignment-calculations                                                   &#xd;
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This repository contains the numerical model used to calculate the equilibrium and bias-dependent electrostatic potential, electric field, charge density, and conduction/valence band profiles across arbitrarily complex, multi-layer (metal–insulator–semiconductor) heterostructures. The model self-consistently solves the Poisson equation as a two-point boundary value problem (BVP), including:&#xd;
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Position-dependent doping/trap concentrations, permittivities, effective masses, and electron affinities across an arbitrary number of layers.&#xd;
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A Gaussian-distributed trap density of states (DOS) per material, with configurable mean depth, standard deviation, and relative weight for multiple trap species.&#xd;
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Fermi–Dirac occupation statistics (with spin degeneracy for donor-like traps) for both trapped charge and free carriers in the conduction band (parabolic band approximation).&#xd;
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Externally applied bias, including additional voltage-drop terms to capture non-ideal voltage division across the stack (e.g., due to interface dipoles or series resistances).&#xd;
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The output of the model is the spatial profile of the conduction and valence band edges, which can be used to interpret band alignment, barrier formation, and accumulation/depletion behavior at oxide interfaces relevant to resistive-switching (memristive) devices.</dcterms:description><dcterms:subject>Engineering</dcterms:subject><dcterms:subject>Mathematical Sciences</dcterms:subject><dcterms:subject>Physics</dcterms:subject><dcterms:subject>Band-alignment</dcterms:subject><dcterms:subject>ReRAM</dcterms:subject><dcterms:subject>Memristive Device</dcterms:subject><dcterms:language>English</dcterms:language><dcterms:contributor>Wittberg, Clemens</dcterms:contributor><dcterms:dateSubmitted>2026-07-28</dcterms:dateSubmitted><dcterms:type>source code</dcterms:type><dcterms:license>NONE</dcterms:license><dcterms:rights>MIT License&#xd;
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Copyright (c) 2026 Clemens J. Wittberg / Peter Grünberg Institut 7 for electronic materials Forschungszentrum Jülich &#xd;
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Permission is hereby granted, free of charge, to any person obtaining a copy&#xd;
of this software and associated documentation files (the "Software"), to deal&#xd;
in the Software without restriction, including without limitation the rights&#xd;
to use, copy, modify, merge, publish, distribute, sublicense, and/or sell&#xd;
copies of the Software, and to permit persons to whom the Software is&#xd;
furnished to do so, subject to the following conditions:&#xd;
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The above copyright notice and this permission notice shall be included in all&#xd;
copies or substantial portions of the Software.&#xd;
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THE SOFTWARE IS PROVIDED "AS IS", WITHOUT WARRANTY OF ANY KIND, EXPRESS OR&#xd;
IMPLIED, INCLUDING BUT NOT LIMITED TO THE WARRANTIES OF MERCHANTABILITY,&#xd;
FITNESS FOR A PARTICULAR PURPOSE AND NONINFRINGEMENT. IN NO EVENT SHALL THE&#xd;
AUTHORS OR COPYRIGHT HOLDERS BE LIABLE FOR ANY CLAIM, DAMAGES OR OTHER&#xd;
LIABILITY, WHETHER IN AN ACTION OF CONTRACT, TORT OR OTHERWISE, ARISING FROM,&#xd;
OUT OF OR IN CONNECTION WITH THE SOFTWARE OR THE USE OR OTHER DEALINGS IN THE&#xd;
SOFTWARE.</dcterms:rights></metadata>