<?xml version='1.0' encoding='UTF-8'?><metadata xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns="http://dublincore.org/documents/dcmi-terms/"><dcterms:title>Replication Data for: Low-energy modeling of three-dimensional topological insulator nanostructures</dcterms:title><dcterms:identifier>https://doi.org/10.26165/JUELICH-DATA/EDREBI</dcterms:identifier><dcterms:creator>Zsurka, Eduárd</dcterms:creator><dcterms:creator>Wang, Cheng</dcterms:creator><dcterms:creator>Legendre, Julian</dcterms:creator><dcterms:creator>Di Miceli, Daniele</dcterms:creator><dcterms:creator>Serra, Llorenç</dcterms:creator><dcterms:creator>Grützmacher, Detlev</dcterms:creator><dcterms:creator>Schmidt, Thomas L.</dcterms:creator><dcterms:creator>Rüßmann, Philipp</dcterms:creator><dcterms:creator>Moors, Kristof</dcterms:creator><dcterms:publisher>Jülich DATA</dcterms:publisher><dcterms:issued>2024-07-05</dcterms:issued><dcterms:modified>2024-07-05T08:13:39Z</dcterms:modified><dcterms:description>We develop an accurate nanoelectronic modeling approach for realistic three-dimensional topological insulator nanostructures and investigate their low-energy surface-state spectrum. Starting from the commonly considered four-band k·p bulk model Hamiltonian for the Bi₂Se₃ family of topological insulators, we derive new parameter sets for Bi₂Se₃, Bi₂Te₃ and Sb₂Te₃. We consider a fitting strategy applied to ab initio band structures around the Γ point that ensures a quantitatively accurate description of the low-energy bulk and surface states, while avoiding the appearance of unphysical low-energy states at higher momenta, something that is not guaranteed by the commonly considered perturbative approach. We analyze  the effects that arise in the low-energy spectrum of topological surface states due to band anisotropy and electron-hole asymmetry, yielding Dirac surface states that naturally localize on different side facets. In the thin-film limit, when surface states hybridize through the bulk, we resort to a thin-film model and derive thickness-dependent model parameters from ab initio calculations that show good agreement with experimentally resolved band structures, unlike the bulk model that neglects relevant many-body effects in this regime. Our versatile modeling approach offers a reliable starting point for accurate simulations of realistic topological material-based nanoelectronic devices.&#xd;
This dataset contains the data used in the corresponding publication.</dcterms:description><dcterms:subject>Physics</dcterms:subject><dcterms:subject>DFT</dcterms:subject><dcterms:subject>topological insulators</dcterms:subject><dcterms:subject>tight-binding</dcterms:subject><dcterms:subject>k.p low energy model</dcterms:subject><dcterms:subject>effective Hamiltonian</dcterms:subject><dcterms:isReferencedBy>Eduárd Zsurka, Cheng Wang, Julian Legendre, Daniele Di Miceli, Llorenç Serra, Detlev Grützmacher, Thomas L. Schmidt, Philipp Rüßmann, Kristof Moors, Low-energy modeling of three-dimensional topological insulator nanostructures, Materials Cloud Archive 2024.X (2024), doi, 10.24435/materialscloud:mx-bn, https://doi.org/10.24435/materialscloud:mx-bn</dcterms:isReferencedBy><dcterms:contributor>Rüßmann, Philipp</dcterms:contributor><dcterms:dateSubmitted>2024-07-05</dcterms:dateSubmitted><dcterms:license>CC0</dcterms:license><dcterms:rights>CC0 Waiver</dcterms:rights></metadata>