<?xml version='1.0' encoding='UTF-8'?><metadata xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns="http://dublincore.org/documents/dcmi-terms/"><dcterms:title>JART VCM v1b var</dcterms:title><dcterms:identifier>https://doi.org/10.26165/JUELICH-DATA/FERGKU</dcterms:identifier><dcterms:creator>Menzel, Stephan</dcterms:creator><dcterms:creator>Bengel, Christopher</dcterms:creator><dcterms:publisher>Jülich DATA</dcterms:publisher><dcterms:issued>2025-03-25</dcterms:issued><dcterms:modified>2025-03-25T09:41:19Z</dcterms:modified><dcterms:description>The JART VCM v1b var model represents an extension of the JART VCM v1b model which additionally considers device-to-device and cycle-to-cycle variability. The ECD can be seen in Fig. 1. The physical equations are the same as in the v1b model. Device-to-device variability is achieved through parameter variation of specific parameters during initialization of the devices and cycle-to-cycle variability is achieved through modification of the same parameters during the simulation run.</dcterms:description><dcterms:subject>Engineering</dcterms:subject><dcterms:subject>Physics</dcterms:subject><dcterms:isReferencedBy>C. Bengel, A. Siemon, F. Cüppers, S. Hoffmann-Eifert, A. Hardtdegen, M. von Witzleben, L. Hellmich, R. Waser and S. Menzel, Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models, IEEE Trancsactions on Circuits and Systems-I, VOL. 67, NO. 12, 2020., doi, https://doi.org/10.1109/TCSI.2020.3018502, https://doi.org/10.1109/TCSI.2020.3018502</dcterms:isReferencedBy><dcterms:contributor>Bestaeva, Alana</dcterms:contributor><dcterms:dateSubmitted>2025-02-18</dcterms:dateSubmitted><dcterms:license>CC0</dcterms:license><dcterms:rights>CC0 Waiver</dcterms:rights></metadata>