JART VCM v2https://doi.org/10.26165/JUELICH-DATA/NFHTARMenzel, StephanBengel, ChristopherJülich DATA2025-03-252025-03-25T09:37:14ZThe JARV VCM v2 model is an extension of the JART VCM v1 model. It includes two different switching locations I and II (see JART VCM v2.jpg). Thus, the model uses two state variables. In addition, diffusion between region I and II is included in this model, enabling the simulation of retention. The model was developed to simulate complementary switching and bipolar switching in a single device [1].Computer and Information ScienceEngineering[1] C. La Torre, A. F. Zurhelle, T. Breuer, R. Waser and S. Menzel, Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices, IEEE Trans. Electron Devices 66, 1268-1275 (2019)., doi, https://doi.org/10.1109/TED.2019.2892997, https://doi.org/10.1109/TED.2019.2892997Zhao, Xinyi2025-01-30CC0CC0 Waiver