JART VCM Rthdoi:10.26165/JUELICH-DATA/1HWSUAJülich DATA2025-07-151Menzel, Stephan; Son, Seokki; Schön, Daniel, 2025, "JART VCM Rth", https://doi.org/10.26165/JUELICH-DATA/1HWSUA, Jülich DATA, V1JART VCM Rthdoi:10.26165/JUELICH-DATA/1HWSUAMenzel, StephanSon, SeokkiSchön, DanielJülich DATAMenzel, StephanSchön, Daniel2025-07-15Computer and Information ScienceEngineeringPhysicsThis model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance (Rth,eff) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and includes the variability in switching cycles to reflect experimental conditions. Figure 1(JART_VCM_Rth_Fig1.jpg) shows that the validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively. The Verilog-A code of this model and user guide can be downloaded.CC0 WaiverJART_VCM_Rth_Fig1.jpgThis figure shows that the validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively.image/jpegJART VCM Rth veriloga.vaThe Verilog-A code of this modelapplication/octet-stream