JART ECM v1doi:10.26165/JUELICH-DATA/4F3ITWJülich DATA2025-03-251Menzel, Stephan; Bengel, Christopher, 2025, "JART ECM v1", https://doi.org/10.26165/JUELICH-DATA/4F3ITW, Jülich DATA, V1JART ECM v1doi:10.26165/JUELICH-DATA/4F3ITWMenzel, StephanBengel, ChristopherJülich DATAMenzel, StephanSchön, Daniel2025-03-25ChemistryComputer and Information ScienceEngineeringPhysicsThe JART ECM v1 model describes the switching dynamics of Electrochemical Metallization Cells, which are also known as Conductive Bridge RAM (CBRAM) or atomic switches. The model includes the redox-reactions at the metal insulator interfaces, ion hopping transport, and the electrocrystallization of the filament nucleus (see Figure 1). The conduction mechanism is modeled here as an electron tunneling process. The model was originally developed to model the switching dynamics of a Ag/AgI/Pt device [1]. Later it was applied to GeSx based ECM cells [2] and a Ag/SiOx based system [3].CC0 Waiverhttps://doi.org/10.1039/C3CP50738F[1] S. Menzel, S. Tappertzhofen, R. Waser and I. Valov, Switching Kinetics of Electrochemical Metallization Memory Cells, PCCP 15, 6945-6952 (2013).https://doi.org/10.1021/acs.jpcc.5b03622[2] J. van den Hurk, S. Menzel, R. Waser and I. Valov, Processes and Limitations during Filament Formation and Dissolution in GeSx-based ReRAM memory cells, J. Phys. Chem. C 119, 18678-18685 (2015).https://doi.org/10.1088/1361-6528/aa5e59[3] M. Luebben, S. Menzel, S. G. Park, M. Yang, R.Waser and I. Valov, SET kinetics of electrochemical metallization cells - Influence of counter electrodes in SiO2/Ag based systems, Nanotechnology 28, 135205/1-6 (2017).Figure1.jpgIonic and Electronic process included in the JART ECM v1 model.image/jpegJART ECM v1-veriloga.vaThe Verilog-A code of this modelapplication/octet-stream