JART IBM PCMdoi:10.26165/JUELICH-DATA/IV3SBFJülich DATA2026-06-111Menzel, Stephan, 2026, "JART IBM PCM", https://doi.org/10.26165/JUELICH-DATA/IV3SBF, Jülich DATA, V1JART IBM PCMdoi:10.26165/JUELICH-DATA/IV3SBFMenzel, StephanJülich DATAMenzel, StephanMenzel, Stephan2025-11-17Computer and Information SciencePhysicsPCM, memristive device, compact model, SPICE modelIn this work, a compact model for mushroom‐type phase‐change memory devices (JART PCM) is introduced that incorporates the shape and size of the amorphous mark under different programming conditions, and is applicable to both projecting and non‐projecting devices. The model includes analytical equations for the amorphous and crystalline regions and uniquely features a current leakage path that injects current at the outer edge of the electrodes. The results demonstrate that accurately modeling the size and shape of the phase configurations is crucial for predicting the full‐span of the RESET and SET programming, including the characteristics of threshold switching. Additionally, the model effectively captures read‐out behaviors, including the dependence of resistance drift and bipolar current asymmetry behaviours on the phase configurations. The compact model is also provided in Verilog–A format, so it can be easily used in standard circuit‐level simulation tools.CC0 Waiver10.1002/aelm.202500496S. Menzel, B. Kersting, R. W. Ahmad, A. Sebastian, and G. S. Syed, “A Device‐Level Compact Model for Mushroom‐Type Phase Change Memory.” Adv. Electron. Mater. (2025): e00496.JART IBM PCM Mushroom v1-4.txtFirst version of JART IBM PCM Model in Verilog–A format.text/plain