JART v-ECM v1doi:10.26165/JUELICH-DATA/NDUPBUJülich DATA2025-08-151Ahmad, Rana Walied; Menzel, Stephan, 2025, "JART v-ECM v1", https://doi.org/10.26165/JUELICH-DATA/NDUPBU, Jülich DATA, V1JART v-ECM v1doi:10.26165/JUELICH-DATA/NDUPBUAhmad, Rana WaliedMenzel, StephanJülich DATAMenzel, StephanAhmad, Rana Walied2025-07-27Computer and Information ScienceEngineeringPhysicsOthervolatile-resistive switching, v-ECM, compact model, CBRAM, ReRAM, relaxation, electromotive forceA comprehensive, novel and consistent volatile ECM model is proposed that is derived from the nonvolatile physics-based model "JART ECM v1" comprising electrocrystallization, electron-transfer reactions at the interfaces and ionic migration as speed limiting ionic processes. Additionally, the electromotive force (emf) as counteracting force is introduced into the equation system enabling the simulation of volatile switching effects. Still, the model is consistent with previous results on the SET kinetics. The novelty of it stems from the theory of the nanobattery effect triggered by the emf. Earlier cyclic voltammetry measurements strongly hint towards a naturally intrinsic occurence of the emf within ECM-based systems which might be responsible for volatile properties of these systems. This model’s theory is supported by a clear insight that ionic processes triggering switching within such devices may occur as shifted in terms of the applied electric bias leading to non-zero crossing I-V characteristics. Including the emf to the model opens up a solid and good base for reproducing the volatile device’s dynamic behavior, such as correctly predicting the switching time or relaxation time upon programming with different bias strengths, and allows the model to become robust and consistent regarding nearly any experimental study. The model is implemented using Verilog-A, ready to be used with circuit simulators. [1] (a) 30 cycles of measured I-V sweeps of a Ag-HfO2-Pt ECM device stack are shown. A c2c variability is visible. (b) 30 cycles of simulated I-V sweeps are shown through the usage of the (variability-aware) volatile ECM model. [2] The experimentally measured threshold switching kinetics data points of a Ag-HfO2-Pt ECM device stack together with their d2d variability are displayed in red, whereas the simulated ones with their d2d variability are displayed in blue. [3] (a) The applied voltage signal to a Ag-HfO2-Pt ECM device stack in the measurement and in the simulation in order to investigate the device’s relaxation behavior. (b) The electric current flows through both devices. Here, a transient zoom of the electric current behavior in the measurement as well as in the simulation is shown around 1.04 ms. Once the current becomes smaller than 70 nA the relaxation time is measured: It is the time duration from the onset of the read voltage to the current crossing 70 nA. (c) Rseries = 560 kΩ, (d) Rseries = 1 MΩ: Measured and simulated relaxation time vs. applied voltage including d2d variability for two different series resistances.CC0 WaiverFigure 3 new-1.svg[1] (a) 30 cycles of measured I-V sweeps of a Ag-HfO2-Pt ECM device stack are shown. A c2c variability is visible. (b) 30 cycles of simulated I-V sweeps are shown through the usage of the (variability-aware) volatile ECM model. For both, measurement and simulation, the device switches at Vth = 0.34 V and relaxates at Vhold = 0.13 V, the sweep rate is chosen as 62.5 mV/s for both.image/svg+xmlFigure 4 new-1.svg[2] The experimentally measured threshold switching kinetics data points of a Ag-HfO2-Pt ECM device stack together with their d2d variability are displayed in red, whereas the simulated ones with their d2d variability are displayed in blue.image/svg+xmlFigure 5 new-1.svg[3] (a) The applied voltage signal to a Ag-HfO2-Pt ECM device stack in the measurement and in the simulation in order to investigate the device’s relaxation behavior: The 1 ms programming/write pulse of Vp is followed by a read voltage Vread = 0.1 V. The inset shows that the signal Vp is applied from the left side across a voltage divider: the series resistance and the volatile ECM device (DM) share the applied voltage depending on the ECM device’s resistance state. The right side of the voltage divider is grounded. (b) The electric current Iout flows through both devices. Here, a transient zoom of the electric current behavior in the measurement as well as in the simulation is shown around 1.04 ms: At this time point the applied voltage drops to Vread = 0.1 V and the current relaxates back to the HRS. Once the current becomes smaller than 70 nA the relaxation time is measured: It is the time duration from the onset of the read voltage to the current crossing 70 nA. (c) Rseries = 560 kΩ, (d) Rseries = 1 MΩ: Measured and simulated relaxation time tr vs. applied voltage Vp including d2d variability for two different series resistances.image/svg+xmlveriloga.vaJART ECM v1 volatileapplication/octet-stream