<?xml version='1.0' encoding='UTF-8'?><codeBook xmlns="ddi:codebook:2_5" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="ddi:codebook:2_5 https://ddialliance.org/Specification/DDI-Codebook/2.5/XMLSchema/codebook.xsd" version="2.5"><docDscr><citation><titlStmt><titl>JART VCM v2</titl><IDNo agency="DOI">doi:10.26165/JUELICH-DATA/NFHTAR</IDNo></titlStmt><distStmt><distrbtr source="archive">Jülich DATA</distrbtr><distDate>2025-03-25</distDate></distStmt><verStmt source="DVN"><version date="2025-03-25" type="RELEASED">1</version></verStmt><biblCit>Menzel, Stephan; Bengel, Christopher, 2025, "JART VCM v2", https://doi.org/10.26165/JUELICH-DATA/NFHTAR, Jülich DATA, V1</biblCit></citation></docDscr><stdyDscr><citation><titlStmt><titl>JART VCM v2</titl><IDNo agency="DOI">doi:10.26165/JUELICH-DATA/NFHTAR</IDNo></titlStmt><rspStmt><AuthEnty affiliation="Peter Grünberg Institut (PGI-7)">Menzel, Stephan</AuthEnty><AuthEnty affiliation="RWTH Aachen University">Bengel, Christopher</AuthEnty></rspStmt><prodStmt/><distStmt><distrbtr source="archive">Jülich DATA</distrbtr><contact email="st.menzel@fz-juelich.de">Menzel, Stephan</contact><depositr>Zhao, Xinyi</depositr><depDate>2025-01-30</depDate></distStmt></citation><stdyInfo><subject><keyword>Computer and Information Science</keyword><keyword>Engineering</keyword></subject><abstract>The JARV VCM v2 model is an extension of the JART VCM v1 model. It includes two different switching locations I and II (see JART VCM v2.jpg). Thus, the model uses two state variables. In addition, diffusion between region I and II is included in this model, enabling the simulation of retention. The model was developed to simulate complementary switching and bipolar switching in a single device [1].</abstract><sumDscr/></stdyInfo><method><dataColl><sources/></dataColl><anlyInfo/></method><dataAccs><notes type="DVN:TOU" level="dv">CC0 Waiver</notes><setAvail/><useStmt/></dataAccs><othrStdyMat><relPubl><citation><titlStmt><IDNo agency="doi">https://doi.org/10.1109/TED.2019.2892997</IDNo></titlStmt><biblCit>[1] C. La Torre, A. F. Zurhelle, T. Breuer, R. Waser and S. Menzel, Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices, IEEE Trans. Electron Devices 66, 1268-1275 (2019).</biblCit></citation><ExtLink URI="https://doi.org/10.1109/TED.2019.2892997"/></relPubl></othrStdyMat></stdyDscr><otherMat ID="f22184" URI="https://data.fz-juelich.de/api/access/datafile/22184" level="datafile"><labl>Install_JART_VCM_V2.exe</labl><txt>To use the MATLAB app the downloaded file needs to be executed. During the first installation, the MATLAB runtime environment will be downloaded from the internet.</txt><notes level="file" type="DATAVERSE:CONTENTTYPE" subject="Content/MIME Type">application/x-msdownload</notes></otherMat><otherMat ID="f22183" URI="https://data.fz-juelich.de/api/access/datafile/22183" level="datafile"><labl>JART VCM 2 veriloga.va</labl><txt>The Verilog-A code of this model.</txt><notes level="file" type="DATAVERSE:CONTENTTYPE" subject="Content/MIME Type">application/octet-stream</notes></otherMat><otherMat ID="f22182" URI="https://data.fz-juelich.de/api/access/datafile/22182" level="datafile"><labl>JART VCM v2.jpg</labl><txt>Equivalent circuit diagram of the JART VCM v2 model.</txt><notes level="file" type="DATAVERSE:CONTENTTYPE" subject="Content/MIME Type">image/jpeg</notes></otherMat></codeBook>