Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interfacedoi:10.26165/JUELICH-DATA/NRZVPEJülich DATA2025-07-081Niclas Tilgner; Susanne Wolff; Serguei Soubatch; Tien-Lin Lee; Andres David Peña Unigarro; Sibylle Gemming; F. Stefan Tautz; Thomas Seyller; Christian Kumpf; Fabian Göhler; Philip Schädlich, 2025, "Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface", https://doi.org/10.26165/JUELICH-DATA/NRZVPE, Jülich DATA, V1Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interfacedoi:10.26165/JUELICH-DATA/NRZVPENiclas TilgnerSusanne WolffSerguei SoubatchTien-Lin LeeAndres David Peña UnigarroSibylle GemmingF. Stefan TautzThomas SeyllerChristian KumpfFabian GöhlerPhilip SchädlichResearch Unit FOR5242 (project 449119662)Collaborative Research Centre No. 223848855-SFB 1083, sub-project A12Jülich DATASubach, SergeyChristian KumpfFabian GöhlerPhilip SchädlichSubach, Sergey2025-05-15PhysicsWe provide here the raw data used to produce Figures in <br> <i> Niclas Tilgner, Susanne Wolff, Serguei Soubatch, Tien-Lin Lee, Andres David Peña Unigarro, Sibylle Gemming, F. Stefan Tautz, Thomas Seyller, Christian Kumpf, Fabian Göhler, and Philip Schädlich, </i><br><b> "Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface" </b><br> Nature Communications <b>16</b>, 6171 (2025), DOI: 10.1038/s41467-025-60440-x <br><br><i> Niclas Tilgner, Susanne Wolff, Serguei Soubatch, Tien-Lin Lee, Andres David Peña Unigarro, Sibylle Gemming, F. Stefan Tautz, Thomas Seyller, Christian Kumpf, Fabian Göhler, and Philip Schädlich, </i><br><b> "Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface" </b><br> Nature Communications <b>16</b>, 6171 (2025), DOI: 10.1038/s41467-025-60440-xFigure_1_ARPES_Precursor_GK-direction.txtARPES intensity of the precursor phase measured along the Г-К direction and used to produce Figure 1.text/plainFigure_1_ARPES_Precursor_GM-direction.txtARPES intensity of the precursor phase measured along the Г-М direction and used to produce Figure 1.text/plainFigure_1_NIXSW-imaging_Precursor.txtCoherent fractions and coherent positions of the bulk components (Si and C) and Bi of the precursor phase derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 1 d, e, and f.text/plainFigure_2_ARPES_Bismuthene_GK-direction.txtARPES intensity of bismuthene measured along the Г-К direction and used to produce Figure 2.text/plainFigure_2_ARPES_Bismuthene_GM-direction.txtARPES intensity of bismuthene measured along the Г-М direction and used to produce Figure 2.text/plainFigure_2_NIXSW-imaging_Bismuthene.txtCoherent fractions and coherent positions of the bulk components (Si and C) and Bi of bismuthene derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 2 a and b.text/plainFigure_3a_ARPES_4H.txtARPES intensity of bismuthene on 4H-SiC used to produce Figure 3a.text/plainFigure_3b_ARPES_6H.txtARPES intensity of bismuthene on 6H-SiC used to produce Figure 3b.text/plainFigure_3c_ARPES_4H+Cs.txtARPES intensity of bismuthene on 4H-SiC with Cs used to produce Figure 3c.text/plainFigure_3d_ARPES_6H+Cs.txtARPES intensity of bismuthene on 6H-SiC with Cs used to produce Figure 3d.text/plainLEED_Precursor_100eV.bmpLow-energy electron diffraction pattern of the precursor phase measured with 100 eV electrons.image/bmp