JART VCM Rth (ICPSR doi:10.26165/JUELICH-DATA/1HWSUA)

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JART VCM Rth

doi:10.26165/JUELICH-DATA/1HWSUA

Jülich DATA

2025-07-15

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Menzel, Stephan; Son, Seokki; Schön, Daniel, 2025, "JART VCM Rth", https://doi.org/10.26165/JUELICH-DATA/1HWSUA, Jülich DATA, V1

JART VCM Rth

doi:10.26165/JUELICH-DATA/1HWSUA

Menzel, Stephan (Peter Grünberg Institut (PGI-7))

Son, Seokki (Peter Grünberg Institut (PGI-7))

Schön, Daniel (Peter Grünberg Institut (PGI-7))

Jülich DATA

Menzel, Stephan

Schön, Daniel

2025-07-15

Computer and Information Science, Engineering, Physics

This model is an extension of the existing JART (Jülich Aachen Resistive Switching Tools) VCM v1b model, by incorporating state-dependent effective thermal resistance (Rth,eff) based on an electro-thermal continuum model. This enables precise modeling of multilevel behavior and includes the variability in switching cycles to reflect experimental conditions. Figure 1(JART_VCM_Rth_Fig1.jpg) shows that the validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively. The Verilog-A code of this model and user guide can be downloaded.

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JART_VCM_Rth_Fig1.jpg

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This figure shows that the validation with TaOx-based VCM devices co-integrated with 180 nm n-MOS transistors demonstrates the model’s accuracy, achieving consistent multilevel programming across 7-states and capturing cycle-to-cycle variability effectively.

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JART VCM Rth veriloga.va

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The Verilog-A code of this model

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