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Part 1: Document Description
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Citation |
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Title: |
JART ECM v1 |
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Identification Number: |
doi:10.26165/JUELICH-DATA/4F3ITW |
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Distributor: |
Jülich DATA |
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Date of Distribution: |
2025-03-25 |
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Version: |
1 |
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Bibliographic Citation: |
Menzel, Stephan; Bengel, Christopher, 2025, "JART ECM v1", https://doi.org/10.26165/JUELICH-DATA/4F3ITW, Jülich DATA, V1 |
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Citation |
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Title: |
JART ECM v1 |
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Identification Number: |
doi:10.26165/JUELICH-DATA/4F3ITW |
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Authoring Entity: |
Menzel, Stephan (Peter Grünberg Institut (PGI-7)) |
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Bengel, Christopher (RWTH Aachen University) |
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Distributor: |
Jülich DATA |
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Access Authority: |
Menzel, Stephan |
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Depositor: |
Schön, Daniel |
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Date of Deposit: |
2025-03-25 |
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Study Scope |
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Keywords: |
Chemistry, Computer and Information Science, Engineering, Physics |
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Abstract: |
The JART ECM v1 model describes the switching dynamics of Electrochemical Metallization Cells, which are also known as Conductive Bridge RAM (CBRAM) or atomic switches. The model includes the redox-reactions at the metal insulator interfaces, ion hopping transport, and the electrocrystallization of the filament nucleus (see Figure 1). The conduction mechanism is modeled here as an electron tunneling process. The model was originally developed to model the switching dynamics of a Ag/AgI/Pt device [1]. Later it was applied to GeSx based ECM cells [2] and a Ag/SiOx based system [3]. |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Notes: |
CC0 Waiver |
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Other Study Description Materials |
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Related Publications |
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Citation |
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Identification Number: |
https://doi.org/10.1039/C3CP50738F |
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Bibliographic Citation: |
[1] S. Menzel, S. Tappertzhofen, R. Waser and I. Valov, Switching Kinetics of Electrochemical Metallization Memory Cells, PCCP 15, 6945-6952 (2013). |
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Citation |
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Identification Number: |
https://doi.org/10.1021/acs.jpcc.5b03622 |
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Bibliographic Citation: |
[2] J. van den Hurk, S. Menzel, R. Waser and I. Valov, Processes and Limitations during Filament Formation and Dissolution in GeSx-based ReRAM memory cells, J. Phys. Chem. C 119, 18678-18685 (2015). |
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Citation |
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Identification Number: |
https://doi.org/10.1088/1361-6528/aa5e59 |
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Bibliographic Citation: |
[3] M. Luebben, S. Menzel, S. G. Park, M. Yang, R.Waser and I. Valov, SET kinetics of electrochemical metallization cells - Influence of counter electrodes in SiO2/Ag based systems, Nanotechnology 28, 135205/1-6 (2017). |
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Label: |
Figure1.jpg |
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Text: |
Ionic and Electronic process included in the JART ECM v1 model. |
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Notes: |
image/jpeg |
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Label: |
JART ECM v1-veriloga.va |
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Text: |
The Verilog-A code of this model |
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Notes: |
application/octet-stream |