Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface (ICPSR doi:10.26165/JUELICH-DATA/NRZVPE)

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Document Description

Citation

Title:

Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Identification Number:

doi:10.26165/JUELICH-DATA/NRZVPE

Distributor:

Jülich DATA

Date of Distribution:

2025-07-08

Version:

1

Bibliographic Citation:

Niclas Tilgner; Susanne Wolff; Serguei Soubatch; Tien-Lin Lee; Andres David Peña Unigarro; Sibylle Gemming; F. Stefan Tautz; Thomas Seyller; Christian Kumpf; Fabian Göhler; Philip Schädlich, 2025, "Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface", https://doi.org/10.26165/JUELICH-DATA/NRZVPE, Jülich DATA, V1

Study Description

Citation

Title:

Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface

Identification Number:

doi:10.26165/JUELICH-DATA/NRZVPE

Authoring Entity:

Niclas Tilgner (Institute of Physics, Chemnitz University of Technology)

Susanne Wolff (Institute of Physics, Chemnitz University of Technology)

Serguei Soubatch (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich)

Tien-Lin Lee (Diamond Light Source Ltd)

Andres David Peña Unigarro (Institute of Physics, Chemnitz University of Technology)

Sibylle Gemming (Institute of Physics, Chemnitz University of Technology)

F. Stefan Tautz (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich)

Thomas Seyller (Institute of Physics, Chemnitz University of Technology)

Christian Kumpf (Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich)

Fabian Göhler (Institute of Physics, Chemnitz University of Technology)

Philip Schädlich (Institute of Physics, Chemnitz University of Technology)

Grant Number:

Research Unit FOR5242 (project 449119662)

Grant Number:

Collaborative Research Centre No. 223848855-SFB 1083, sub-project A12

Distributor:

Jülich DATA

Access Authority:

Subach, Sergey

Access Authority:

Christian Kumpf

Access Authority:

Fabian Göhler

Access Authority:

Philip Schädlich

Depositor:

Subach, Sergey

Date of Deposit:

2025-05-15

Study Scope

Keywords:

Physics

Abstract:

We provide here the raw data used to produce Figures in <br> <i> Niclas Tilgner, Susanne Wolff, Serguei Soubatch, Tien-Lin Lee, Andres David Peña Unigarro, Sibylle Gemming, F. Stefan Tautz, Thomas Seyller, Christian Kumpf, Fabian Göhler, and Philip Schädlich, </i><br><b> "Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface" </b><br> Nature Communications <b>16</b>, 6171 (2025), DOI: 10.1038/s41467-025-60440-x <br><br>

Methodology and Processing

Sources Statement

Data Access

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Citation

Bibliographic Citation:

<i> Niclas Tilgner, Susanne Wolff, Serguei Soubatch, Tien-Lin Lee, Andres David Peña Unigarro, Sibylle Gemming, F. Stefan Tautz, Thomas Seyller, Christian Kumpf, Fabian Göhler, and Philip Schädlich, </i><br><b> "Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface" </b><br> Nature Communications <b>16</b>, 6171 (2025), DOI: 10.1038/s41467-025-60440-x

Other Study-Related Materials

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Figure_1_ARPES_Precursor_GK-direction.txt

Text:

ARPES intensity of the precursor phase measured along the Г-К direction and used to produce Figure 1.

Notes:

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Other Study-Related Materials

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Figure_1_ARPES_Precursor_GM-direction.txt

Text:

ARPES intensity of the precursor phase measured along the Г-М direction and used to produce Figure 1.

Notes:

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Other Study-Related Materials

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Figure_1_NIXSW-imaging_Precursor.txt

Text:

Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of the precursor phase derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 1 d, e, and f.

Notes:

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Other Study-Related Materials

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Figure_2_ARPES_Bismuthene_GK-direction.txt

Text:

ARPES intensity of bismuthene measured along the Г-К direction and used to produce Figure 2.

Notes:

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Other Study-Related Materials

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Figure_2_ARPES_Bismuthene_GM-direction.txt

Text:

ARPES intensity of bismuthene measured along the Г-М direction and used to produce Figure 2.

Notes:

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Other Study-Related Materials

Label:

Figure_2_NIXSW-imaging_Bismuthene.txt

Text:

Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of bismuthene derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 2 a and b.

Notes:

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Other Study-Related Materials

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Figure_3a_ARPES_4H.txt

Text:

ARPES intensity of bismuthene on 4H-SiC used to produce Figure 3a.

Notes:

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Figure_3b_ARPES_6H.txt

Text:

ARPES intensity of bismuthene on 6H-SiC used to produce Figure 3b.

Notes:

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Figure_3c_ARPES_4H+Cs.txt

Text:

ARPES intensity of bismuthene on 4H-SiC with Cs used to produce Figure 3c.

Notes:

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Other Study-Related Materials

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Figure_3d_ARPES_6H+Cs.txt

Text:

ARPES intensity of bismuthene on 6H-SiC with Cs used to produce Figure 3d.

Notes:

text/plain

Other Study-Related Materials

Label:

LEED_Precursor_100eV.bmp

Text:

Low-energy electron diffraction pattern of the precursor phase measured with 100 eV electrons.

Notes:

image/bmp