10.26165/JUELICH-DATA/4F3ITWMenzel, StephanStephanMenzelPeter Grünberg Institut (PGI-7)Bengel, ChristopherChristopherBengelRWTH Aachen UniversityJülich DATA2025ChemistryComputer and Information ScienceEngineeringPhysicsMenzel, StephanStephanMenzelPeter Grünberg Institut (PGI-7)2025-03-252025-03-2510.1039/C3CP50738F10.1021/acs.jpcc.5b0362210.1088/1361-6528/aa5e5910277111498image/jpegapplication/octet-stream1.0CC0 WaiverThe JART ECM v1 model describes the switching dynamics of Electrochemical Metallization Cells, which are also known as Conductive Bridge RAM (CBRAM) or atomic switches. The model includes the redox-reactions at the metal insulator interfaces, ion hopping transport, and the electrocrystallization of the filament nucleus (see Figure 1). The conduction mechanism is modeled here as an electron tunneling process. The model was originally developed to model the switching dynamics of a Ag/AgI/Pt device [1]. Later it was applied to GeSx based ECM cells [2] and a Ag/SiOx based system [3].