10.26165/JUELICH-DATA/B2NTJYJalil, Abdur RehmanAbdur RehmanJalil0000-0003-1869-2466FZ JuelichHou, XiaoXiaoHouFZ JuelichSchüffelgen, PeterPeterSchüffelgenFZ JuelichBae, Jin HeeJin HeeBaeFZ JuelichNeumann, ElmarElmarNeumannFZ JuelichMussler, GregorGregorMusslerFZ JuelichPlucinski, LukaszLukaszPlucinskiFZ JuelichGrützmacher, DetlevDetlevGrützmacherFZ JuelichJülich DATA2023Physicstopological Insulator thin filmsphase change materialsstructural transformationphase-selective growthmolecular beam epitaxyneuromorphic platformJalil, Abdur RehmanAbdur RehmanJalilFZ JuelichJalil, Abdur RehmanAbdur RehmanJalilFZ Juelich2023-07-182023-08-07ASCII Files359874433337586376074430533693376163764537621109267551092678910927253109267911092673010927231109267331092680210927038109266651092707671614277376311273010587903967654872737645376293763237612375844873495451092707921487727530154387454432713159413166713163013165130629847165235335789424133942470444249784424702342497875329689text/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-fieldtext/x-fixed-field1.0CC0 WaiverAbstract: Over the past three decades, the growth of Bi thin films has been extensively explored due to their potential applications in various fields such as thermoelectrics, ferroelectrics, and recently for topological and neuromorphic applications, too. Despite significant research efforts in these areas, achieving reliable and controllable growth of high-quality Bi thin-film allotropes has remained a challenge. Previous studies have reported the growth of trigonal and orthorhombic phases on various substrates yielding low-quality epilayers characterized by surface morphology. In this study, we present a systematic growth investigation enabling the high-quality growth of Bi epilayers on Bi-terminated Si (111) 1×1 surfaces using molecular beam epitaxy. Our work yields a phase map that demonstrates the realization of trigonal, orthorhombic, and pseudocubic thin-film allotropes of Bi. In-depth characterization through X-ray diffraction (XRD) techniques and scanning transmission electron microscopy (STEM) analysis provides a comprehensive understanding of phase-segregation, phase-stability, phase-transformation, and phase-dependent thickness limitations in various Bi thin-film allotropes. Our study provides recipes for the realization of high-quality Bi thin films with desired phases, offering opportunities for the scalable refinement of Bi into quantum and neuromorphic devices and for revisiting technological proposals of this versatile material platform from the past 30 years.Federal Ministry of Education and Research16ME0398KFederal Ministry of Education and Research13N15264Deutsche ForschungsgemeinschaftEXC 2004/1–390534769Bavarian Ministry of Economic Affairs and Media, Energy and Technology07 02/686 58/1/21 1/22 2/23