{"@context":"http://schema.org","@type":"Dataset","@id":"https://doi.org/10.26165/JUELICH-DATA/4F3ITW","identifier":"https://doi.org/10.26165/JUELICH-DATA/4F3ITW","name":"JART ECM v1","creator":[{"name":"Menzel, Stephan","affiliation":"Peter Grünberg Institut (PGI-7)"},{"name":"Bengel, Christopher","affiliation":"RWTH Aachen University"}],"author":[{"name":"Menzel, Stephan","affiliation":"Peter Grünberg Institut (PGI-7)"},{"name":"Bengel, Christopher","affiliation":"RWTH Aachen University"}],"datePublished":"2025-03-25","dateModified":"2025-03-25","version":"1","description":["The JART ECM v1 model describes the switching dynamics of Electrochemical Metallization Cells, which are also known as Conductive Bridge RAM (CBRAM) or atomic switches. The model includes the redox-reactions at the metal insulator interfaces, ion hopping transport, and the electrocrystallization of the filament nucleus (see Figure 1). The conduction mechanism is modeled here as an electron tunneling process. The model was originally developed to model the switching dynamics of a Ag/AgI/Pt device [1]. Later it was applied to GeSx based ECM cells [2] and a Ag/SiOx based system [3]."],"keywords":["Chemistry","Computer and Information Science","Engineering","Physics"],"citation":[{"@type":"CreativeWork","text":"[1] S. Menzel, S. Tappertzhofen, R. Waser and I. Valov, Switching Kinetics of Electrochemical Metallization Memory Cells, PCCP 15, 6945-6952 (2013).","@id":"https://doi.org/10.1039/C3CP50738F","identifier":"https://doi.org/10.1039/C3CP50738F"},{"@type":"CreativeWork","text":"[2] J. van den Hurk, S. Menzel, R. Waser and I. Valov, Processes and Limitations during Filament Formation and Dissolution in GeSx-based ReRAM memory cells, J. Phys. Chem. C 119, 18678-18685 (2015).","@id":"https://doi.org/10.1021/acs.jpcc.5b03622","identifier":"https://doi.org/10.1021/acs.jpcc.5b03622"},{"@type":"CreativeWork","text":"[3] M. Luebben, S. Menzel, S. G. Park, M. Yang, R.Waser and I. Valov, SET kinetics of electrochemical metallization cells - Influence of counter electrodes in SiO2/Ag based systems, Nanotechnology 28, 135205/1-6 (2017).","@id":"https://doi.org/10.1088/1361-6528/aa5e59","identifier":"https://doi.org/10.1088/1361-6528/aa5e59"}],"license":{"@type":"Dataset","text":"CC0","url":"https://creativecommons.org/publicdomain/zero/1.0/"},"includedInDataCatalog":{"@type":"DataCatalog","name":"Jülich DATA","url":"https://data.fz-juelich.de"},"publisher":{"@type":"Organization","name":"Jülich DATA"},"provider":{"@type":"Organization","name":"Jülich DATA"},"distribution":[{"@type":"DataDownload","name":"Figure1.jpg","fileFormat":"image/jpeg","contentSize":102771,"description":"Ionic and Electronic process included in the JART ECM v1 model.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/28444"},{"@type":"DataDownload","name":"JART ECM v1-veriloga.va","fileFormat":"application/octet-stream","contentSize":11498,"description":"The Verilog-A code of this model","contentUrl":"https://data.fz-juelich.de/api/access/datafile/28445"}]}