{"@context":"http://schema.org","@type":"Dataset","@id":"https://doi.org/10.26165/JUELICH-DATA/NRZVPE","identifier":"https://doi.org/10.26165/JUELICH-DATA/NRZVPE","name":"Data used in: Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface","creator":[{"name":"Niclas Tilgner","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0009-0001-7592-7674","identifier":"https://orcid.org/0009-0001-7592-7674"},{"name":"Susanne Wolff","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0009-0003-6480-9319","identifier":"https://orcid.org/0009-0003-6480-9319"},{"name":"Serguei Soubatch","affiliation":"Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich","@id":"https://orcid.org/0000-0002-1455-0260","identifier":"https://orcid.org/0000-0002-1455-0260"},{"name":"Tien-Lin Lee","affiliation":"Diamond Light Source Ltd","@id":"https://orcid.org/0000-0001-6935-5983","identifier":"https://orcid.org/0000-0001-6935-5983"},{"name":"Andres David Peña Unigarro","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0009-0002-3283-5283","identifier":"https://orcid.org/0009-0002-3283-5283"},{"name":"Sibylle Gemming","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0000-0003-0455-1945","identifier":"https://orcid.org/0000-0003-0455-1945"},{"name":"F. Stefan Tautz","affiliation":"Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich","@id":"https://orcid.org/0000-0003-3583-2379","identifier":"https://orcid.org/0000-0003-3583-2379"},{"name":"Thomas Seyller","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0000-0002-4953-2142","identifier":"https://orcid.org/0000-0002-4953-2142"},{"name":"Christian Kumpf","affiliation":"Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich","@id":"https://orcid.org/0000-0003-3567-5377","identifier":"https://orcid.org/0000-0003-3567-5377"},{"name":"Fabian Göhler","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0000-0003-2299-2445","identifier":"https://orcid.org/0000-0003-2299-2445"},{"name":"Philip Schädlich","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0000-0002-0075-2291","identifier":"https://orcid.org/0000-0002-0075-2291"}],"author":[{"name":"Niclas Tilgner","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0009-0001-7592-7674","identifier":"https://orcid.org/0009-0001-7592-7674"},{"name":"Susanne Wolff","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0009-0003-6480-9319","identifier":"https://orcid.org/0009-0003-6480-9319"},{"name":"Serguei Soubatch","affiliation":"Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich","@id":"https://orcid.org/0000-0002-1455-0260","identifier":"https://orcid.org/0000-0002-1455-0260"},{"name":"Tien-Lin Lee","affiliation":"Diamond Light Source Ltd","@id":"https://orcid.org/0000-0001-6935-5983","identifier":"https://orcid.org/0000-0001-6935-5983"},{"name":"Andres David Peña Unigarro","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0009-0002-3283-5283","identifier":"https://orcid.org/0009-0002-3283-5283"},{"name":"Sibylle Gemming","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0000-0003-0455-1945","identifier":"https://orcid.org/0000-0003-0455-1945"},{"name":"F. Stefan Tautz","affiliation":"Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich","@id":"https://orcid.org/0000-0003-3583-2379","identifier":"https://orcid.org/0000-0003-3583-2379"},{"name":"Thomas Seyller","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0000-0002-4953-2142","identifier":"https://orcid.org/0000-0002-4953-2142"},{"name":"Christian Kumpf","affiliation":"Peter Grünberg Institut (PGI-3), Forschungszentrum Jülich","@id":"https://orcid.org/0000-0003-3567-5377","identifier":"https://orcid.org/0000-0003-3567-5377"},{"name":"Fabian Göhler","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0000-0003-2299-2445","identifier":"https://orcid.org/0000-0003-2299-2445"},{"name":"Philip Schädlich","affiliation":"Institute of Physics, Chemnitz University of Technology","@id":"https://orcid.org/0000-0002-0075-2291","identifier":"https://orcid.org/0000-0002-0075-2291"}],"datePublished":"2025-07-08","dateModified":"2025-07-08","version":"1","description":["We provide here the raw data used to produce Figures in   Niclas Tilgner, Susanne Wolff, Serguei Soubatch, Tien-Lin Lee, Andres David Peña Unigarro, Sibylle Gemming, F. Stefan Tautz, Thomas Seyller, Christian Kumpf, Fabian Göhler, and Philip Schädlich,  \"Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface\"  Nature Communications 16, 6171 (2025), DOI: 10.1038/s41467-025-60440-x"],"keywords":["Physics"],"citation":[{"@type":"CreativeWork","text":"<i> Niclas Tilgner, Susanne Wolff, Serguei Soubatch, Tien-Lin Lee, Andres David Peña Unigarro, Sibylle Gemming, F. Stefan Tautz, Thomas Seyller, Christian Kumpf, Fabian Göhler, and Philip Schädlich, </i>\n<br>\n<b> \"Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface\" </b>\n<br> Nature Communications \n<b>16</b>, 6171 (2025), DOI: 10.1038/s41467-025-60440-x","@id":"https://doi.org/10.1038/s41467-025-60440-x","identifier":"https://doi.org/10.1038/s41467-025-60440-x"}],"license":{"@type":"Dataset"},"includedInDataCatalog":{"@type":"DataCatalog","name":"Jülich DATA","url":"https://data.fz-juelich.de"},"publisher":{"@type":"Organization","name":"Jülich DATA"},"provider":{"@type":"Organization","name":"Jülich DATA"},"funder":[{"@type":"Organization","name":"Deutsche Forschungsgemeinschaft"},{"@type":"Organization","name":"Deutsche Forschungsgemeinschaft"}],"distribution":[{"@type":"DataDownload","name":"Figure_1_ARPES_Precursor_GK-direction.txt","fileFormat":"text/plain","contentSize":7189019,"description":"ARPES intensity of the precursor phase measured along the Г-К direction and used to produce Figure 1.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29576"},{"@type":"DataDownload","name":"Figure_1_ARPES_Precursor_GM-direction.txt","fileFormat":"text/plain","contentSize":7188469,"description":"ARPES intensity of the precursor phase measured along the Г-М direction and used to produce Figure 1.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29580"},{"@type":"DataDownload","name":"Figure_1_NIXSW-imaging_Precursor.txt","fileFormat":"text/plain","contentSize":1028,"description":"Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of the precursor phase derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 1 d, e, and f.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29583"},{"@type":"DataDownload","name":"Figure_2_ARPES_Bismuthene_GK-direction.txt","fileFormat":"text/plain","contentSize":7182472,"description":"ARPES intensity of bismuthene measured along the Г-К direction and used to produce Figure 2.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29573"},{"@type":"DataDownload","name":"Figure_2_ARPES_Bismuthene_GM-direction.txt","fileFormat":"text/plain","contentSize":7181547,"description":"ARPES intensity of bismuthene measured along the Г-М direction and used to produce Figure 2.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29578"},{"@type":"DataDownload","name":"Figure_2_NIXSW-imaging_Bismuthene.txt","fileFormat":"text/plain","contentSize":1084,"description":"Coherent fractions and coherent positions of the bulk components (Si and C) and Bi of bismuthene derived from NIXSW measurements with different Bragg reflections and used to construct the atomic-density-distribution maps in Figure 2 a and b.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29582"},{"@type":"DataDownload","name":"Figure_3a_ARPES_4H.txt","fileFormat":"text/plain","contentSize":2094150,"description":"ARPES intensity of bismuthene on 4H-SiC used to produce Figure 3a.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29581"},{"@type":"DataDownload","name":"Figure_3b_ARPES_6H.txt","fileFormat":"text/plain","contentSize":3274948,"description":"ARPES intensity of bismuthene on 6H-SiC used to produce Figure 3b.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29574"},{"@type":"DataDownload","name":"Figure_3c_ARPES_4H+Cs.txt","fileFormat":"text/plain","contentSize":2094085,"description":"ARPES intensity of bismuthene on 4H-SiC with Cs used to produce Figure 3c.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29575"},{"@type":"DataDownload","name":"Figure_3d_ARPES_6H+Cs.txt","fileFormat":"text/plain","contentSize":2094237,"description":"ARPES intensity of bismuthene on 6H-SiC with Cs used to produce Figure 3d.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29579"},{"@type":"DataDownload","name":"LEED_Precursor_100eV.bmp","fileFormat":"image/bmp","contentSize":4343094,"description":"Low-energy electron diffraction pattern of the precursor phase measured with 100 eV electrons.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/29577"}]}