{"@context":"http://schema.org","@type":"Dataset","@id":"https://doi.org/10.26165/JUELICH-DATA/WHSSZA","identifier":"https://doi.org/10.26165/JUELICH-DATA/WHSSZA","name":"JART ECM v1 var","creator":[{"name":"Ahmad, Rana Walied","affiliation":"Peter Grünberg Institut (PGI-7)","@id":"https://orcid.org/0000-0002-0445-8110","identifier":"https://orcid.org/0000-0002-0445-8110"},{"name":"Menzel, Stephan","affiliation":"Peter Grünberg Institut (PGI-7)"}],"author":[{"name":"Ahmad, Rana Walied","affiliation":"Peter Grünberg Institut (PGI-7)","@id":"https://orcid.org/0000-0002-0445-8110","identifier":"https://orcid.org/0000-0002-0445-8110"},{"name":"Menzel, Stephan","affiliation":"Peter Grünberg Institut (PGI-7)"}],"datePublished":"2025-08-15","dateModified":"2025-08-15","version":"1","description":["A purely physics-based variability-aware compact model of electrochemical metallization memory (ECM) cells is presented. Since this extension consists of several different features allowing for a realistic variability-aware fit, it depicts a unique model comprising physics-based, stochastically and experimentally originating variabilities and reproduces them well. It is based on the deterministic ECM model JART ECM v1. The variability-aware model introduces device-to-device variability by choosing the model parameters from a physically reasonable value range. The cycle-to-cycle variability can be introduced by updating these parameters according to a random walk algorithm after a certain time step. Moreover, a stochastic feature is added to the gap evolution within the model’s main dynamics-determining differential equation. The model is validated by experimental data of Cu/SiO2/W ECM cells. This model can be used in higher-level circuit simulators like Spectre to design variability-aware application circuits. [1] shows (a) experimentally measured and (b) simulatively verified device-to-device variability for SET kinetics analysis. [2] shows experimentally measured I–V sweeps in red, simulated I–V sweeps in blue: (a) experimentally recorded I–V sweep, (b) simulated I-V sweep characteristics with all simulation modifications, (c) - (f) simulated I–V sweep characteristics showing individual types of simulation modifications."],"keywords":["Computer and Information Science","Engineering","Physics","Other","memristive devices, variability-aware modeling, ReRAM, ECM, CBRAM, SPICE level, compact model"],"citation":[{"@type":"CreativeWork","text":"R. W. Ahmad et al. “Variability-Aware Modeling of Electrochemical Metallization Memory Cells”. In: Neuromorphic Computing and Engineering 4.3 (2024)","@id":"https://iopscience.iop.org/article/10.1088/2634-4386/ad57e7","identifier":"https://iopscience.iop.org/article/10.1088/2634-4386/ad57e7"}],"license":{"@type":"Dataset","text":"CC0","url":"https://creativecommons.org/publicdomain/zero/1.0/"},"includedInDataCatalog":{"@type":"DataCatalog","name":"Jülich DATA","url":"https://data.fz-juelich.de"},"publisher":{"@type":"Organization","name":"Jülich DATA"},"provider":{"@type":"Organization","name":"Jülich DATA"},"distribution":[{"@type":"DataDownload","name":"Figure4-1.svg","fileFormat":"image/svg+xml","contentSize":483583,"description":"[1] (a) Experimentally measured and (b) simulatively verified device-to-device variability for SET kinetics analysis.\r\nSimulation also includes the SET kinetics curve obtained by mean parameter values (in black). It shows the first steeper slope from 0.3–3.5 V related to the electron transfer regime and the second flatter slope from 3.5–4.8 V related to the mixed control regime.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/33976"},{"@type":"DataDownload","name":"Figure5-1.svg","fileFormat":"image/svg+xml","contentSize":3646405,"description":"[2] Experimentally measured I–V sweeps in red, simulated I–V sweeps in blue: (a) experimentally recorded I–V sweep, (b)\r\nsimulated I–V sweep characteristics with all four modifications, (c) only staircase I–V sweep and parameter variation after each\r\nSET and RESET, (d) only staircase I–V sweep, current averaging for each staircase step and parameter variation after each\r\nstaircase step, (e) only parameter variation after each staircase step, but continuous sweep and continuous current and (f) only\r\nstochasticity in the gap evolution within the ODE.","contentUrl":"https://data.fz-juelich.de/api/access/datafile/33977"},{"@type":"DataDownload","name":"veriloga.va","fileFormat":"application/octet-stream","contentSize":17162,"description":"JART ECM v1 var","contentUrl":"https://data.fz-juelich.de/api/access/datafile/33993"}]}